SEMiX151GD066HDs
SEMiX151GD066HDs is IGBT manufactured by Semikron Danfoss.
Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- UL recognised file no. E63532
Typical Applications-
- Matrix Converter
- Resonant Inverter
- Current Source Inverter
Remarks
- Case temperature limited to TC=125°C max.
- Product reliability results are valid for Tj=150°C
- For short circuit: Soft RGoff remended
- Take care of over-voltage caused by stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT VCES IC
ICnom ICRM VGES tpsc
Tj
Tj = 175 °C
ICRM = 2x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
Tc = 25 °C Tc = 80 °C
Tj = 150 °C
Inverse diode
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2x IFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0 r CE
VGE(th)...
