SEMiX151GD12Vs Datasheet | Semikron Danfoss

Features - Homogeneous Si - VCE(sat) with positive temperature coefficient - High short circuit capability - UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications- - AC inverter drives - UPS - Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 r CE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Remarks - Case temperature limited to TC=125°C max. - Product reliability results are valid for Tj=150°C Conditions IC = 150 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 6 m A VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1  RG off = 1  di/dton = 4600 A/µs di/dtoff = 1700 A/µs du/dtoff = 6700 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 150 °C min. typ. 1.75 2.2 0.94 0.88 5.4 8.8 max. 2.2 2.5 1.04 0.98 7.7 10.1 6.5 0.3 Unit V V V V m m V m A m A n F n F n F n C  ns ns m J ns ns m J 6 0.1 9.0 0.89 0.88 1650 5.00 319 46 19.4 482 68 17.1 K/W GD © by SEMIKRON Rev. 2 - 16.02.2011 1 SEMi X151GD12Vs Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C r F Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 4400 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 1.1 0.7 4.3 7.0 min. typ. 2.1 2.1 1.3 0.9 5.6 7.8 175 27.5 11.5 max. 2.46 2.4 1.5 1.1 6.4 8.5 Unit V V V V m m A µC m J Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 SEMi X® 13 IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.31...