SEMiX151GD12E4s
SEMiX151GD12E4s is IGBT manufactured by Semikron Danfoss.
Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognized, file no. E63532
Typical Applications-
- AC inverter drives
- UPS
- Electronic Welding
Remarks
- Case temperature limited to TC=125°C max.
- Product reliability results are valid for Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3x ICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3x IFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Tterminal = 80 °C
Visol
AC sinus 50Hz, t = 1 min
Characteristics...
