SEMiX223GD12Vc Datasheet | Semikron Danfoss

Features - Homogeneous Si - VCE(sat) with positive temperature coefficient - High short circuit capability - UL recognised file no. E63532 Tj = 175 °C IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications- - AC inverter drives - UPS - Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 r CE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Remarks - Case temperature limited to TC=125°C max. - Product reliability results are valid for Tj=150°C - Dynamic values apply to the following bination of resistors: RGon,main = 2,9  RGoff,main = 2,9  RG,X = 2,2  RE,X = 0,5  Conditions IC = 225 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE = 15 V VGE=VCE, IC = 9 m A VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 225 A VGE = ±15 V RG on = 3.8  RG off = 3.8  di/dton = 3200 A/µs di/dtoff = 2000 A/µs du/dtoff = 6600 V/ µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz Tj = 25 °C Tj = 150 °C min. typ. 1.85 2.3 0.94 0.88 4.0 6.1 max. 2.3 2.55 1.04 0.98 5.6 7.0 6.5 0.3 Unit V V V V m m V m A m A n F n F n F n C  ns ns m J ns ns m J 6 0.1 13.5 1.33 1.33 2460 3.33 470 72 19.9 665 109 27.2 K/W GD © by SEMIKRON Rev. 2 - 16.02.2011 1 SEMi X223GD12Vc Characteristics Symbol Conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C r F Tj = 25 °C Tj = 150 °C IF = 225 A Tj = 150 °C di/dtoff = 3400 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 1.1 0.7 3.6 4.7 min. typ. 2.2 2.1 1.3 0.9 3.9 5.4 210 39.4 16.4 max. 2.49 2.4 1.5 1.1 4.4 5.9 Unit V V V V m m A µC m J Inverse diode VF = VEC IF = 225 A VGE = 0 V chip VF0 SEMi X® 33c IRRM Qrr Err Rth(j-c) Module LCE...