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SEMiX452GAL126HDs - IGBT

Key Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognised file no. E63532 Typical.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX452GAL126HDs SEMiX® 2s Trench IGBT Modules SEMiX452GAL126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max.