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SKM50GAL12T4 Datasheet IGBT

Manufacturer: Semikron Danfoss

Overview: SKM50GAL12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 81 62 50 150 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 65 49 50 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 150 270 -40 ... 175 Tc = 25 °C Tc = 80 °C 65 49 50 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 150 270 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 200 -40 ...

Key Features

  • IGBT4 = 4. generation fast trench IGBT (Infineon).
  • CAL4 = Soft switching 4. generation CAL-diode.
  • Isolated copper baseplate using DBC technology (Direct Bonded Copper).
  • Increased power cycling capability.
  • With integrated gate resistor.
  • For higher switching frequenzies up to 20kHz.
  • UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Inverse diode Tj = 175 °C Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tst.

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SKM50GAL12T4 Distributor