SKiM406GD066HD Overview
125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SKiM® 63 Trench IGBT Modules SKiM406GD066HD Tj = 175 °C IFnom.
SKiM406GD066HD Key Features
- IGBT 3 Trench Gate Technology
- Solderless sinter technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
- Pressure contact technology for thermal contacts and electrical contacts
- High short circuit capability, self limiting to 6 x IC
- Integrated temperature sensor