SKiM609GAL12E4 Description
125 AC sinus 50 Hz, t = 1 min 2500 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SKiM® 93 Trench IGBT Modules SKiM609GAL12E4 Target Data.
SKiM609GAL12E4 Key Features
- IGBT 4 Trench Gate Technology
- Solderless sinter technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
- Pressure contact technology forthermal contacts and electricalcontacts
- High short circuit capability, self limiting to 6 x IC
- Integrated temperature sensor