SKiM609GAL12E4 Overview
Key Features
- IGBT 4 Trench Gate Technology
- Solderless sinter technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
- Pressure contact technology forthermal contacts and electricalcontacts
- High short circuit capability, self limiting to 6 x IC
- Integrated temperature sensor Tj = 175 °C IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 175 °C
