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SKiM609GAL12E4 - IGBT

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Semikron International

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SKiM609GAL12E4 IGBT by Semikron International - Datasheet Preview — Datasheet preview – SKiM609GAL12E4

Datasheet Details

Part number	SKiM609GAL12E4
Manufacturer	Semikron International
File Size	187.11 KB
Description	IGBT
Datasheet	SKiM609GAL12E4 Datasheet
Additional preview pages of the SKiM609GAL12E4 datasheet.

Product details

Features

IGBT 4 Trench Gate Technology.
Solderless sinter technology.
VCE(sat) with positive temperature coefficient.
Low inductance case.
Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
Pressure contact technology forthermal contacts and electricalcontacts.
High short circuit capability, self limiting to 6 x IC.
Integrated temperature sensor Tj = 175 °C IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj M.

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Published: Aug 12, 2014 |