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SKiM609GAR12E4 - IGBT

Features

  • IGBT 4 Trench Gate Technology.
  • Solderless sinter technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology for thermal contacts.
  • Spring contact system to attach driver PCB to the control terminals.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor Typical.

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Datasheet Details

Part number SKiM609GAR12E4
Manufacturer Semikron International
File Size 285.22 KB
Description IGBT
Datasheet download datasheet SKiM609GAR12E4 Datasheet

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Full PDF Text Transcription

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SKiM609GAR12E4 SKiM® 93 Trench IGBT Modules SKiM609GAR12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 175 °C Ts = 25
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