SKiM909GD066HD - IGBT

Semikron International

Features

IGBT 3 Trench Gate Technology.
Solderless sinter technology.
VCE(sat) with positive temperature coefficient.
Low inductance case.
Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
Pressure contact technology for thermal contacts and electrical contacts.
High short circuit capability, self limiting to 6 x IC.
Integrated temperature sensor IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(.

SKiM909GD066HD igbt by Semikron International - Datasheet Preview

Datasheet Details

Part number	SKiM909GD066HD
Manufacturer	Semikron International
File Size	188.47 KB
Description	IGBT
Datasheet	SKiM909GD066HD Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SKiM201MLI12E4	IGBT	Semikron
SKiM301MLI07E4	IGBT	Semikron
SKiM301MLI12E4	IGBT	Semikron
SKiM301TMLI12E4B	IGBT	Semikron
SKiM301TMLI12E4C	IGBT	Semikron

Other Datasheets by Semikron International

Part Number	Description
SKIM120GD176D	IGBT
SKIM150GD126D	IGBT
SKIM150GD128D	IGBT
SKIM180GD176D	IGBT
SKiM200GD126D	IGBT

Full PDF Text Transcription

Click to expand full text

SKiM909GD066HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 600 899 715 900 1800 -20 ... 20 6 -40 ... 175 670 521 600 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1200 4320 -40 ... 175 700 -40 ...

Published: Aug 12, 2014 |