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SEMiX206GD12T4p - IGBT

Key Features

  • br>.
  • Press Fit.
  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognised file no. E63532 Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX206GD12T4p SEMiX® 6p Trench IGBT Modules SEMiX206GD12T4p Features* • Press Fit • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Visol between temperature sensor and power section is only 2500V • Product reliability results valid for Tj ≤ 150°C (recommended Tjop= -40 ...