Full PDF Text Transcription for SEMiX223GB12M7p (Reference)
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SEMiX223GB12M7p SEMiX® 3p Trench IGBT Modules SEMiX223GB12M7p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient...
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Trenchgate technology • VCE(sat) with positive temperature coefficient • High overload capability • Low loss high density IGBTs • Press-fit pins as auxiliary contacts • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C (recommended Tj,op=-40...