SEMiX305MLI12E4V2
SEMiX305MLI12E4V2 is IGBT manufactured by Semikron Danfoss.
Features
-
- Solderless assembling solution with Press FIT signal pins and screw power terminals
- IGBT 4 Trench Gate Technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Reliable mechanical design with injection moulded terminals and reliable internal connections
- UL recognized file no. E63532
- NTC temperature sensor inside
Typical Applications
- Solar, Power Supply
Remarks-
- Case temperature limited to TC=125°C max.
- Product reliability results valid for Tj ≤150°C (remended Tj,op= -40…+150°C)
- IGBT1: outer IGBTs T1 & T4
- IGBT2: inner IGBTs T2 & T3
- Diode1: outer diodes D1 & D4
- Diode2: inner diodes D2 & D3
- Diode5: clamping diodes D5 & D6
- For storage and case temperature with
TIM see document “TP(HALA P8) SEMi X 5p”
Footnotes
1) Please find further technical information on the SEMIKRON website.
Absolute Maximum Ratings
Symbol Conditions
IGBT1 VCES IC
ICnom ICRM VGES tpsc
Tj IGBT2 VCES IC
ICnom ICRM VGES tpsc
Tj Diode1 VRRM IF
IFRM IFSM Tj Diode2 VRRM IF
IFRM IFSM Tj Diode5 VRRM IF
IFRM IFSM Tj Module It(RMS) Tstg Visol
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤1200 V
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C, VCES ≤ 1200 V
Tj = 25 °C Tj = 175...
