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SK200TMLI12F4TE2 - IGBT

Features

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  • Optimized design for superior thermal performances.
  • Low inductive design.
  • Press-Fit contact technology.
  • 1200V Trench IGBT4 Fast (F4).
  • 650V Trench IGBT3 (E3).
  • Robust and soft switching CAL4F diode technology.
  • Integrated NTC temperature sensor.
  • UL recognized file no. E 63 532 Typical.

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Full PDF Text Transcription

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SK200TMLI12F4TE2 SEMITOP®E2 3-Level TNPC SK200TMLI12F4TE2 Features* • Optimized design for superior thermal performances • Low inductive design • Press-Fit contact technology • 1200V Trench IGBT4 Fast (F4) • 650V Trench IGBT3 (E3) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • UPS • Solar Remarks* • Recommended Tjop= -40 ... +150°C • IGBT1: outer IGBTs T1 & T4 • IGBT2: inner IGBTs T2 & T3 • Diode1: outer diodes D1 & D4 • Diode2: inner diodes D2 & D3 Absolute Maximum Ratings Symbol Conditions IGBT1 VCES IC IC ICnom ICRM VGES tpsc Tj IGBT2 VCES IC IC ICnom ICRM VGES tpsc Tj Diode1 VRRM IF IF IFRM IFSM Tj Diode2 VRRM IF IF IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 25 °C λpaste=0.
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