Download the SKM200GB123D1 datasheet PDF.
This datasheet also covers the SKM200GA123D variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.
Key Features
MOS input (voltage controlled).
N channel, Homogeneous Si.
Low inductance case.
Very low tail current with low temperature dependence.
High short circuit capability, self limiting to 6.
Icnom.
Latch-up free.
Fast & soft inverse CAL diodes8).
Isolated copper baseplate using DCB Direct Copper Bonding Technology.
Large clearance (13 mm) and creepage distances (20 mm). Typical.
Full PDF Text Transcription for SKM200GB123D1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SKM200GB123D1. For precise diagrams, tables, and layout, please refer to the original PDF.
Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) Values ... 123 D ... 123 D1 Units V V A A V W °C V 1200 1200 20...
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ons 1) Values ... 123 D ... 123 D1 Units V V A A V W °C V 1200 1200 200 / 180 400 / 360 ± 20 1380 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 200 / 130 400 / 360 1450 10 500 FWD 6) 260 / 180 400 / 360 1800 24 200 SEMITRANS® M IGBT Modules SKM 200 GA 123 D*) SKM 200 GB 123 D SKM 200 GB 123 D1 6) SKM 200 GAL 123 D 6) SKM 200 GAR 123 D 6) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.
SKM200GB123D1 Datasheet
