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SKM200GB12T4 - IGBT

Key Features

  • IGBT4 = 4. generation fast trench IGBT (Infineon).
  • CAL4 = Soft switching 4. generation CAL-diode.
  • Isolated copper baseplate using DBC technology (Direct Bonded Copper).
  • Increased power cycling capability.
  • With integrated gate resistor.
  • For higher switching frequenzies up to 20kHz.
  • UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Inverse diode Tj = 175 °C Characteristics Symbol IGBT VCE(s.

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Full PDF Text Transcription for SKM200GB12T4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SKM200GB12T4. For precise diagrams, tables, and layout, please refer to the original PDF.

SKM200GB12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200...

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≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 Fast IGBT4 Modules SKM200GB12T4 Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4.