SKM200GB12T4
SKM200GB12T4 is IGBT manufactured by Semikron Danfoss.
Features
- IGBT4 = 4. generation fast trench IGBT (Infineon)
- CAL4 = Soft switching 4. generation CAL-diode
- Isolated copper baseplate using DBC technology (Direct Bonded Copper)
- Increased power cycling capability
- With integrated gate resistor
- For higher switching frequenzies up to 20k Hz
- UL recognized, file no. E63532
VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Inverse diode Tj = 175 °C
Characteristics Symbol
IGBT VCE(sat) VCE0 r CE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)
Conditions
IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V chiplevel VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE =
- 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 200 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 5500 A/µs di/dtoff = 2300 A/µs per IGBT Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C min. typ.
1.80 2.20 0.8 0.7 5.00 7.50 max.
2.05 2.40 0.9 0.8 5.75 8.00 6.5 2.7
Unit
V V V V m m V m A m A n F n F n F n C ns ns m J ns ns m J
Typical Applications-
- AC inverter drives
- UPS
- Electronic welders at fsw up to 20 k Hz
Remarks
- Case temperature limited to Tc = 125°C max.
- Remended Top = -40 ... +150°C
- Product reliability results valid for Tj = 150°C
VGE=VCE, IC = 7.6 m A Tj = 25 °C Tj = 150 °C f = 1 MHz f = 1 MHz f = 1 MHz
12.3 0.81 0.69 1130 3.8 185 40 21 425 82 20 0.14
K/W
GB © by SEMIKRON Rev. 3
- 03.09.2013 1
Characteristics Symbol Conditions
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 25 °C min. typ.
2.20 2.15 1.3 0.9 4.5 6.3 174 33 13 max.
2.52 2.47 1.5 1.1 5.1 6.8
Unit
V V V V m m A µC m...