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SKM25GAH125D - IGBT

Key Features

  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability, self limiting to 6 x Icnom.
  • Fast & soft inverse CAL diodes.
  • Large clearance (10 mm) and creepage distances (20 mm).
  • Isolated copper baseplate using DBC Technology (Direct Copper Bonding).
  • UL recognized, file no. E63532 Typical.

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SKM25GAH125D SEMITRANS® 6 IGBT Modules SKM25GAH125D Target Data Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) • UL recognized, file no.