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SKM300GA123D Datasheet IGBT

Manufacturer: Semikron Danfoss

Overview: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Values Units 1200 1200 300 / 220 600 / 440 ± 20 1660 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 300 / 200 600 / 440 2200 24200 V V A A V W °C V SEMITRANS® M IGBT Modules SKM 300 GA 123 D Inverse Diode Tcase = 25/80 °C IF= – IC IFM= – ICM Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 °C IFSM tp = 10 ms; Tj = 150 °C I2t A A A A2s SEMITRANS 4 Characteristics Symbol V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE Conditions 1) VGE = 0, IC = 3 mA VGE = VCE, IC = 8 mA  Tj = 25 °C VGE = 0  VCE = VCES  Tj = 125 °C VGE = 20 V, VCE = 0  IC = 200 A  VGE = 15 V;   IC = 300 A  Tj = 25 (125) °C VCE = 20 V, IC = 200 A min. typ. max.

Key Features

  • MOS input (voltage controlled).
  • N channel, Homogeneous Si.
  • Low inductance case.
  • Very low tail current with low temperature dependence.
  • High short circuit capability, self limiting to 6.
  • Icnom.
  • Latch-up free.
  • Fast & soft inverse CAL diodes8).
  • Isolated copper baseplate using DCB Direct Copper Bonding Technology.
  • Large clearance (12 mm) and creepage distances (20 mm). Typical.

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SKM300GA123D Distributor