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SKiM301MLI07E4 - IGBT

Datasheet Summary

Features

  • IGBT 4 Trench Gate Technology.
  • Solder technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology for thermal contacts.
  • Spring contact system to attach driver PCB to the control terminals.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor Typical.

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Datasheet Details

Part number SKiM301MLI07E4
Manufacturer Semikron
File Size 160.38 KB
Description IGBT
Datasheet download datasheet SKiM301MLI07E4 Datasheet
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Full PDF Text Transcription

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SKiM301MLI07E4 SKiM® 4 IGBT Modules SKiM301MLI07E4 Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • UPS • 3 Level Inverter Remarks • Case temperature limited to Tc = 125°C max, recommended Top = -40 … +150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse diode IF
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