Datasheet4U Logo Datasheet4U.com

SKiM301TMLI12E4C - IGBT

Datasheet Summary

Features

  • IGBT 4 Trench Gate Technology.
  • Solder technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology for thermal contacts.
  • Spring contact system to attach driver PCB to the control terminals.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor Typical.

📥 Download Datasheet

Datasheet preview – SKiM301TMLI12E4C

Datasheet Details

Part number SKiM301TMLI12E4C
Manufacturer Semikron
File Size 212.97 KB
Description IGBT
Datasheet download datasheet SKiM301TMLI12E4C Datasheet
Additional preview pages of the SKiM301TMLI12E4C datasheet.

📁 Similar Datasheet

Other Datasheets by Semikron

Full PDF Text Transcription

Click to expand full text
SKiM301TMLI12E4C SKiM® 4 Trench IGBT Modules SKiM301TMLI12E4C Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj
Published: |