SKiM459GD12E4V2 Overview
Key Features
- IGBT 4 Trench Gate Technology
- Solderless sinter technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Insulated by Al2O3 DBC (Direct Bonded Copper) ceramic substrate
- Pressure contact technology for thermal contacts
- Spring contact system to attach driver PCB to the control terminals
- High short circuit capability, self limiting to 6 x IC
- Integrated temperature sensor
- Improved power cycle capability of diodes due to AlCu-bond wires
