• Part: PE01P15KA
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 1.36 MB
Download PE01P15KA Datasheet PDF
Semione
PE01P15KA
PE01P15KA is P-Channel Enhancement Mode Power MOSFET manufactured by Semione.
Description The PE01P15KA uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = -100V, ID = -15A RDS(ON) < 90mΩ @ VGS=-10V RDS(ON) < 100mΩ @ VGS=-4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram Marking and pin assignment TO-252-2L Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=0.5m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC Rating -100 ±20 -15 -10.5 -45 91 169 -55 To 175 Unit V V A A A W m J ℃ ℃/W .semi-one. Page 1 2022 Aug. v1.0 Electrical Characteristics (TC=25℃ unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 4) Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Maximum Body-Diode Current Symbol Condition Min Typ BVDSS IDSS...