PE01P18KT - P-Channel Enhancement Mode Power MOSFET

Semione

General Description

The PE01P18KT uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS = -100V, ID = -18A RDS(ON) < 90mΩ @ VGS=-10V RDS(ON) < 100mΩ @ VGS=-4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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PE01P18KT p-channel enhancement mode power mosfet by Semione - Datasheet Preview

Datasheet Details

Part number	PE01P18KT
Manufacturer	Semione
File Size	381.20 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE01P18KT Datasheet

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P-Channel Enhancement Mode Power MOSFET Description The PE01P18KT uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -100V, ID = -18A RDS(ON) < 90mΩ @ VGS=-10V RDS(ON) < 100mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management PE01P18KT Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=0.