Part PE01P18K
Description P-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 664.16 KB
semi one
PE01P18K

Overview

The PE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

  • VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance