PE01P18K
PE01P18K is P-Channel Enhancement Mode Power MOSFET manufactured by semi one.
P-Channel Enhancement Mode Power MOSFET
Description
The PE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
- VDS =-100V,ID =-18A RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Application
- Power management in notebook puter
- Portable equipment and battery powered systems
Schematic diagram TO-252 top...
