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PE01P18K - P-Channel Enhancement Mode Power MOSFET

General Description

The PE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

It is ESD protested.

Key Features

  • VDS =-100V,ID =-18A RDS(ON).

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Datasheet Details

Part number PE01P18K
Manufacturer semi one
File Size 664.16 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE01P18K Datasheet

Full PDF Text Transcription (Reference)

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P-Channel Enhancement Mode Power MOSFET Description The PE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.