• Part: PE83H3K
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 2.53 MB
Download PE83H3K Datasheet PDF
Semione
PE83H3K
Description The PE83H3K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 30V, ID = 120A RDS(ON) < 2.8mΩ @ VGS=10V RDS(ON) < 4.6mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery management - Motor controller and driver - PWM applications - Load switch Schematic diagram Marking and pin assignment TO-252-2L Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche current Avalanche Energy (L=0.1m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID(TC=100℃) IDM PD IAS EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case RθJC Rating 30 ±20 120 84 336 100 80 320 -55 To...