• Part: PE83H5Q
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 787.11 KB
Download PE83H5Q Datasheet PDF
Semione
PE83H5Q
Description The PE83H5Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 30V, ID = 150A RDS(ON) < 2.4mΩ @ VGS=10V RDS(ON) < 3.3mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired Application - PWM applications - Load switch - Power management - DC/DC Converter Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Single Pulsed Avalanche Energy (L=0.5m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case RθJC TO-220 Rating 30 ±20 150 105 600 176 600 -55 To 175 Unit V V A A A W m J ℃ ℃/W .semi‐one. Page 1 2023...