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PE83H5Q - N-Channel Enhancement Mode Power MOSFET

General Description

The PE83H5Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 150A RDS(ON) < 2.4mΩ @ VGS=10V RDS(ON) < 3.3mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.

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Datasheet Details

Part number PE83H5Q
Manufacturer Semione
File Size 787.11 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE83H5Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The PE83H5Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 150A RDS(ON) < 2.4mΩ @ VGS=10V RDS(ON) < 3.3mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired Application ● PWM applications ● Load switch ● Power management ● DC/DC Converter PE83H5Q Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Single Pulsed Avalanche Energy (L=0.