Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PES060N04GT uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 40V, ID = 54A
RDS(ON) < 4.6mΩ @ VGS=10V RDS(ON) < 8mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Power Tools
- Load Switch
- DC-DC Converter
Schematic diagram Marking and pin...