2SB772 Datasheet | Semiware Semiconductor

FEATURES High current output up to 3A Low saturation voltage plement to 2SD882 Power Dissipation:1.25W MECHANICAL DATA SOT-223 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 MAXIMUM RATINGS (TA=25°C ) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Plastic-Encapsulate Transistor (PNP) 12 3 SOT-223 B772 Marking C (2) B (1) E (3) Schematic Symbol Value -40 -30 -6 -3 1.25 150 -55~+150 Unit A W ℃ ℃ Product Datasheet Rev. A2.0 1/7 Build Your Design As You Will Http://semiware. Plastic-Encapsulate Transistor (PNP) ELECTRICAL CHARACTERISTICS (TA=25°C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO h FE(1) h FE(2) VCE(sat) VBE(sat) f T Test Conditions IC=-100u A,IE=0 IC=-10m A,IB=0 IE=-100u A,IC=0 VCB= -40V, IE=0 VCB=-30V, IB=0 VEB=-5V, IC=0 VCE=-2V, IC=-1A VCE=-2V, IC=-100m A IC=-2A, IB=-200m A IC=-2A, IB=-200m A VCE=-5V, IC=-100m A ,f=10MHz Min. Typ. Max....