MMBT3906T Datasheet | Semiware Semiconductor

FEATURES Epitaxial Planar Die Construction plementary NPN Type Available Also Available in Lead Free Version MECHANICAL DATA SOT-523 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 MAXIMUM RATINGS (TA=25°C ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Plastic-Encapsulate Transistor (PNP) SOT-523 3N Marking Schematic Symbol Value -40 -40 -5.0 -200 150 833 150 -55~+150 Unit V m A m W ℃/W ℃ ℃ Product Datasheet Rev. A2.0 1/7 Build Your Design As You Will Http://semiware. Plastic-Encapsulate Transistor (PNP) ELECTRICAL CHARACTERISTICS (TA=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO DC current gain h FE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage Transition frequency Collector output capacitance Input capacitance Noise figure Delay time Rise time Storage time Fall time VBE(sat) f T Cobo Ciob NF td tr t S...