MMBT3906T Description
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MMBT3906T Key Features
- 55~+150
- 0.1 μA
- 0.25 V
- 0.65 250
- 0.85 V
- 100 -80 -60 -40 -20 -0 -0
- 500uA -450uA
- 200uA -150uA
- 1.2 β=10
- 0.0 -1
MMBT3906T is PNP Plastic-Encapsulate Transistor manufactured by Semiware Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Galaxy Microelectronics |
MMBT3906T | PNP General Purpose Transistor |
| MMBT3906T | PNP Epitaxial Silicon Transistor | |
SeCoS Halbleitertechnologie GmbH |
MMBT3906T | PNP Silicon General Purpose Transistors |
Micro Commercial Components |
MMBT3906T | PNP General Purpose Transistor |
LGE |
MMBT3906T | PNP Transistor |
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