MMST5401 Datasheet | Semiware Semiconductor

FEATURES Power Dissipation of 200m W High Stability and High Reliability MECHANICAL DATA SOT-323 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 MAXIMUM RATINGS (TA=25°C ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal resistance From junction to ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Plastic-Encapsulate Transistor (PNP) 3 1 2 SOT-323 K4M Marking C (3) (1) B E (2) Schematic Symbol Value -160 -150 -5 -0.6 200 625 -55~+150 -55~+150 Unit A m W ℃/W ℃ ℃ Product Datasheet Rev. A2.0 1/6 Build Your Design As You Will Http://semiware. Plastic-Encapsulate Transistor (PNP) ELECTRICAL CHARACTERISTICS (TA=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE(1) h FE(2) VCE(sat) VBE(sat) f T Test Conditions IC=-100μA,IE=0 IC=-1m A,IB=0 IE=-10μA,IC=0 VCB= -35V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-10m A VCE=-5V, IC=-50m A IC=-50m A, IB=-5m A IC=-50m A, IB=-5m A VCE=-5V,IC=-10m A, f=30MHz Min. Typ. Max. Unit -160 -150 -5 -100 n...