Semiware MMST5401
PNP Plastic-Encapsulate Transistor
FEATURES
Power Dissipation of 200mW High Stability and High ReliabilityMECHANICAL DATA
SOT-323 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IEC61249-2-21:2003MAXIMUM RATINGS
(TA=25°C ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal resistance From junction to ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG MMST5401 Plastic-Encapsulate Transistor (PNP) 3 1 2 SOT-323 K4M Marking C (3) (1) B E (2) Schematic Symbol Value -160 -150 -5 -0.6 200 625 -55~+150 -55~+150 Unit V A mW ℃/W ℃ ℃ Product Datasheet Rev. A2.0 1/6 Build Your Design As You Will R MMST5401 Plastic-Encapsulate Transistor (PNP)ELECTRICAL CHARACTERISTICS
(TA=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitte...