SNM20N65C Datasheet | Semiware Semiconductor

FEATURES Low Gate Charge Low Crss Fast Switching Improved dv/dt and ESD Capability 100% Avalanche energy test APPLICATION High Frequency Switched-Mode Power Supply Electronic lamp ballasts UPS APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 N-Channel MOSFET GD S TO-220C Schematic Symbol ABSOLUTE MAXIMUM RATINGS (TA=25°C ) Parameter Drain-Source Voltage Continuous Drain Current TC=25°C TC=100°C Plused Drain Current (note1) Gate-Source Voltage Avalanche Current (note1) Repetitive Avalanche Energy (note1) Single Pulsed Avalanche Energy (note2) Peak Diode Recovery (note3) Power Dissipation TC=25°C Power Dissipation Derating Factor Above 25℃ Maximum Temperature for Soldering Operating Junction Temperature Range Storage Temperature Range Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient - Drain current limited by maximum junction temperature Product Datasheet Rev. A2.0 Symbol VDSS IDM VGS IAR EAR EAS dv/dt PD PD(DF) TL TJ TSTG Rth(j-c) Rth(j-A) Value 650 20- 14- 80 ±30 20 81 720 4.5 240 2.0 300 150 -55 to +150 0.52 62.5 Unit V A A A V A m J m J V/ns W W/°C °C °C °C °C/W...