SNM20N65C - N-Channel MOSFET

Features

Low Gate Charge Low Crss Fast Switching Improved dv/dt and ESD Capability 100% Avalanche energy test.

Semiware

Datasheet Details

Part number	SNM20N65C
Manufacturer	Semiware
File Size	270.76 KB
Description	N-Channel MOSFET
Datasheet	SNM20N65C Datasheet
Additional preview pages of the SNM20N65C datasheet.

📁 Similar Datasheet

SNM041R4DNAQ - Single N-channel Power MOSFET (SIT)
SNM041R7DNAQ - Single N-channel Power MOSFET (SIT)
SNM041R9DNBQ - Single N-channel Power MOSFET (SIT)
SNM048R5DNAQ - Single N-channel Power MOSFET (SIT)
SNM067500EAQ - Single N-channel Power MOSFET (SIT)
SNM067R9DNAQ - Single N-channel Power MOSFET (SIT)
SNM068R2DRAQ - Single N-channel Power MOSFET (SIT)
SNM101R5TLAQ - Single N-channel Power MOSFET (SIT)
SNM9S102C3010A - OID Sensor Module (SONiX)

Other Datasheets by Semiware

SNM005N04FH - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

R FEATURES Low Gate Charge Low Crss Fast Switching Improved dv/dt and ESD Capability 100% Avalanche energy test APPLICATION High Frequency Switched-Mode Power Supply Electronic lamp ballasts UPS APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IEC61249-2-21:2003 SNM20N65C N-Channel MOSFET GD S TO-220C D G S Schematic Symbol ABSOLUTE MAXIMUM RATINGS (TA=25°C ) Parameter Drain-Source Voltage Continuous Drain Current TC=25°C TC=100°C Plused Drain Current (note1) Gate-Source Voltage Avalanche Current (note1) Repetitive Avalanche Energy (note1) Single Pulsed Avalanche Energy (note2) Peak Diode Recovery (note3) Power Dissipation TC=25°C Power Dissipation Derating Factor Above 25℃ MaximumTemperature for Soldering Operating Junction Temperature Range Storage Temperature R

Published: Dec 9, 2024 |