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SMC2207ESC - Single P-Channel MOSFET

General Description

SMC2207E is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package.

PART NUMBER

Key Features

  • VDS = -20V, ID = -0.6A RDS(ON) =450mΩ(Typ. )@VGS = -4.5V RDS(ON) =630mΩ(Typ. )@VGS = -2.5V RDS(ON) =850mΩ(Typ. )@VGS = -1.8V RDS(ON) =1060mΩ(Typ. )@VGS = -1.5V RDS(ON) =1700mΩ(Typ. )@VGS = -1.2V.
  • Fast switch.
  • 1.2V Low gate drive.

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Datasheet Details

Part number SMC2207ESC
Manufacturer Semtron
File Size 389.31 KB
Description Single P-Channel MOSFET
Datasheet download datasheet SMC2207ESC Datasheet

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SMC2207ESC Single P-Channel MOSFET ■DESCRIPTION SMC2207E is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. ■PART NUMBER INFORMATION SMC 2207 E SC - TR G a b cd e f a : Company name. b : Product Serial number. c : ESD d : Package code SC: SOT-523 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES VDS = -20V, ID = -0.6A RDS(ON) =450mΩ(Typ.)@VGS = -4.5V RDS(ON) =630mΩ(Typ.)@VGS = -2.5V RDS(ON) =850mΩ(Typ.)@VGS = -1.8V RDS(ON) =1060mΩ(Typ.)@VGS = -1.5V RDS(ON) =1700mΩ(Typ.)@VGS = -1.2V ◆Fast switch ◆1.