Description
The SMC2562ESG6 is the N+P channel complementary mode power field effect transistors, used trench technology are well suited for high efficiency fast switching applications, this devices are well suited for applications in the small surface mount package.
PART NUMBER INFORMATION
SMC 2562 E SG6
Features
- N-Channel
VDS=20V, ID=0.98A
RDS(ON)=195mΩ(Typ. )@VGS=10V RDS(ON)=230mΩ(Typ. )@VGS=4.5V
P-Channel
VDS=-20V, ID=-0.65A
RDS(ON)=440mΩ(Typ. )@VGS=-10V RDS(ON)=600mΩ(Typ. )@VGS=-4.5V.
- High-speed switching, Low On-resistance.
- 1.5V Low gate drive.
- ESD protected.
SMC2562ESG6 Datasheet
