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SMC2562ESG6 - 20V Complementary MOSFET

General Description

The SMC2562ESG6 is the N+P channel complementary mode power field effect transistors, used trench technology are well suited for high efficiency fast switching applications, this devices are well suited for applications in the small surface mount package.

PART NUMBER INFORMATION SMC 2562 E SG6

Key Features

  • N-Channel VDS=20V, ID=0.98A RDS(ON)=195mΩ(Typ. )@VGS=10V RDS(ON)=230mΩ(Typ. )@VGS=4.5V P-Channel VDS=-20V, ID=-0.65A RDS(ON)=440mΩ(Typ. )@VGS=-10V RDS(ON)=600mΩ(Typ. )@VGS=-4.5V.
  • High-speed switching, Low On-resistance.
  • 1.5V Low gate drive.
  • ESD protected.

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Datasheet Details

Part number SMC2562ESG6
Manufacturer Semtron
File Size 323.14 KB
Description 20V Complementary MOSFET
Datasheet download datasheet SMC2562ESG6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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■DESCRIPTION The SMC2562ESG6 is the N+P channel complementary mode power field effect transistors, used trench technology are well suited for high efficiency fast switching applications, this devices are well suited for applications in the small surface mount package. ■PART NUMBER INFORMATION SMC 2562 E SG6 - TR G a b c d ef a : Company name b : Product Serial number c : ESD Protection d : Package code SG6: SOT-563 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant SMC2562ESG6 20V Complementary MOSFET ■FEATURES N-Channel VDS=20V, ID=0.98A RDS(ON)=195mΩ(Typ.)@VGS=10V RDS(ON)=230mΩ(Typ.)@VGS=4.5V P-Channel VDS=-20V, ID=-0.65A RDS(ON)=440mΩ(Typ.)@VGS=-10V RDS(ON)=600mΩ(Typ.)@VGS=-4.5V ◆High-speed switching, Low On-resistance ◆1.