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SMC2869ESD6 - Dual P-Channel MOSFET

General Description

SMC2869ESD6 is the dual N-Channel trench MOSFET are well suited for high efficiency fast switching applications, this MOSFET provide superior fast switching performance, this devices are well suited for applications in the small surface mount package.

PART NUMBER INFORMATION SMC 2869 E SD6 - TR

Key Features

  • VDS=-20V, ID=0.52A RDS(ON)=560mΩ(Typ. )@VGS=-4.5V RDS(ON)=740mΩ(Typ. )@VGS=-2.5V RDS(ON)=1000mΩ(Typ. )@VGS=-1.8V RDS(ON)=1400mΩ(Typ. )@VGS=-1.5V.
  • High-speed switching, Low On-resistance.
  • 1.5V Low gate drive.
  • ESD protected.

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Datasheet Details

Part number SMC2869ESD6
Manufacturer Semtron
File Size 266.46 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet SMC2869ESD6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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■DESCRIPTION SMC2869ESD6 is the dual N-Channel trench MOSFET are well suited for high efficiency fast switching applications, this MOSFET provide superior fast switching performance, this devices are well suited for applications in the small surface mount package. ■PART NUMBER INFORMATION SMC 2869 E SD6 - TR G a b c d ef a : Company name b : Product Serial number c : ESD Protection d : Package code SD6: SOT-363 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant SMC2869ESD6 Dual P-Channel MOSFET ■FEATURES VDS=-20V, ID=0.52A RDS(ON)=560mΩ(Typ.)@VGS=-4.5V RDS(ON)=740mΩ(Typ.)@VGS=-2.5V RDS(ON)=1000mΩ(Typ.)@VGS=-1.8V RDS(ON)=1400mΩ(Typ.)@VGS=-1.5V ◆High-speed switching, Low On-resistance ◆1.