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SMC2869ESD - Single P-Channel MOSFET

General Description

SMC2869ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mount package.

Key Features

  • VDS=-20V, ID=0.56A RDS(ON)=560mΩ(Typ. )@VGS=-4.5V RDS(ON)=740mΩ(Typ. )@VGS=-2.5V RDS(ON)=1000mΩ(Typ. )@VGS=-1.8V RDS(ON)=1400mΩ(Typ. )@VGS=-1.5V.
  • High-speed switching, Low On-resistance.
  • 1.5V Low gate drive.
  • ESD protected.

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Datasheet Details

Part number SMC2869ESD
Manufacturer Semtron
File Size 270.72 KB
Description Single P-Channel MOSFET
Datasheet download datasheet SMC2869ESD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMC2869ESD Single P-Channel MOSFET ■DESCRIPTION SMC2869ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mount package. ■PART NUMBER INFORMATION SMC 2869 E SD - TR G a b c d ef a : Company name b : Product Serial number c : ESD Protection d : Package code SD: SOT-323 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES VDS=-20V, ID=0.56A RDS(ON)=560mΩ(Typ.)@VGS=-4.5V RDS(ON)=740mΩ(Typ.)@VGS=-2.5V RDS(ON)=1000mΩ(Typ.)@VGS=-1.8V RDS(ON)=1400mΩ(Typ.)@VGS=-1.5V ◆High-speed switching, Low On-resistance ◆1.