Description
SMC2869ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mount package.
Features
- VDS=-20V, ID=0.56A
RDS(ON)=560mΩ(Typ. )@VGS=-4.5V RDS(ON)=740mΩ(Typ. )@VGS=-2.5V RDS(ON)=1000mΩ(Typ. )@VGS=-1.8V RDS(ON)=1400mΩ(Typ. )@VGS=-1.5V.
- High-speed switching, Low On-resistance.
- 1.5V Low gate drive.
- ESD protected.
SMC2869ESD Datasheet
