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SMC2868ESD - Single N-Channel MOSFET

General Description

SMC2868ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mount package.

Key Features

  • VDS=20V, ID=0.9A RDS(ON)=200mΩ(Typ. )@VGS=4.5V RDS(ON)=245mΩ(Typ. )@VGS=2.5V RDS(ON)=310mΩ(Typ. )@VGS=1.8V RDS(ON)=380mΩ(Typ. )@VGS=1.5V RDS(ON)=680mΩ(Typ. )@VGS=1.2V.
  • High-speed switching, Low On-resistance.
  • 1.2V Low gate drive.
  • ESD protected.

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Datasheet Details

Part number SMC2868ESD
Manufacturer Semtron
File Size 267.39 KB
Description Single N-Channel MOSFET
Datasheet download datasheet SMC2868ESD Datasheet

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SMC2868ESD Single N-Channel MOSFET ■DESCRIPTION SMC2868ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mount package. ■PART NUMBER INFORMATION SMC 2868 E SD - TR G a b cd ef a : Company name b : Product Serial number c : ESD Protection d : Package code SD: SOT-323 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES VDS=20V, ID=0.9A RDS(ON)=200mΩ(Typ.)@VGS=4.5V RDS(ON)=245mΩ(Typ.)@VGS=2.5V RDS(ON)=310mΩ(Typ.)@VGS=1.8V RDS(ON)=380mΩ(Typ.)@VGS=1.5V RDS(ON)=680mΩ(Typ.)@VGS=1.2V ◆High-speed switching, Low On-resistance ◆1.