Description
SMC2868ESD used trench technology are well suited for high efficiency fast switching applications, this MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, this devices are well suited for applications in the small surface mount package.
Features
- VDS=20V, ID=0.9A
RDS(ON)=200mΩ(Typ. )@VGS=4.5V RDS(ON)=245mΩ(Typ. )@VGS=2.5V RDS(ON)=310mΩ(Typ. )@VGS=1.8V RDS(ON)=380mΩ(Typ. )@VGS=1.5V RDS(ON)=680mΩ(Typ. )@VGS=1.2V.
- High-speed switching, Low On-resistance.
- 1.2V Low gate drive.
- ESD protected.
SMC2868ESD Datasheet
