SMC8810W Overview
SMC8810 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology to provide excellent RDS(ON). These devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.
SMC8810W Key Features
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability