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STP4435M - Single P-Channel MOSFET

General Description

STP4435 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

Key Features

  • VDS = -30V, ID = -10.6A RDS(ON)=14mΩ(Typ. )@VGS=-10V RDS(ON)=18mΩ(Typ. )@VGS=-4.5V.
  • Fast switch.
  • High power and current handling capability.

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Datasheet Details

Part number STP4435M
Manufacturer Semtron
File Size 363.81 KB
Description Single P-Channel MOSFET
Datasheet download datasheet STP4435M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP4435M Single P-Channel MOSFET ■DESCRIPTION STP4435 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior ,fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is suitable for use as a load switch or PWM applications. ■PART NUMBER INFORMATION STP 4435 M - TR G a b c de a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS = -30V, ID = -10.6A RDS(ON)=14mΩ(Typ.)@VGS=-10V RDS(ON)=18mΩ(Typ.)@VGS=-4.