Semtron STP4435M
STP4435 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior ,fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is suitable for use as a load switch or PWM applications.| Part No. | STP4435M |
|---|---|
| Datasheet | STP4435M Download |
| Manufacturer |  Semtron |
| Description | Single P-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●PART NUMBER INFORMATION STP 4435 M - TR G a b c de a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant●
FEATURES
VDS = -30V, ID = -10.6A RDS(ON)=14mΩ(Typ.)@VGS=-10V RDS(ON)=18mΩ(Typ.)@VGS=-4.5V●Fast switch
●High power and current handling capability
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APPLICATIONS
●Load Switch●LED Application
●DC-DC Power Management D D D D G S S S SOP-8 D G S
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ABSOLUTE MAXIMUM RATINGS
(TA = 25°C Unless otherwise noted ) Symbol VDSS VGSS ID IDM IAS EAS PD TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current A Avalanche Current A Single Pulse Avalanche energy L=0.1mH AE TA=25°C TA=70°C Power Dissipation B TA=25°C TA=70°C Operation Junction Temperature Storage Temperature Range Rating -30 ±20 -10.6 -8.5 -42.4 -30 45 3.1 2 -55/150 -55/150●THERMAL RESISTANCE Symbol Parameter Typ Max Thermal Resistance Junction to Ambient B t≦10s 40 RθJA Thermal Resistance Junction to Ambient BC Steady-State 70 Units V V A A A A mJ W W °C °C Units °C/W STP4435M Rev.A2 1 Copyright © Semtron Microtech Corp.
