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STP4435 - MOSFET

Datasheet Summary

Description

STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP4435
Manufacturer Stanson Technology
File Size 591.22 KB
Description MOSFET
Datasheet download datasheet STP4435 Datasheet
Additional preview pages of the STP4435 datasheet.

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Full PDF Text Transcription

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STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits. PIN CONFIGURATION SOP-8 FEATURE l -30V/-9.2A, RDS(ON) =-22mΩ (Typ.) @VGS =-10V l -30V/-7.0A, RDS(ON) = 30mΩ @VGS = -4.
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