Datasheet Summary
3DD57, 3DD60
NPN Silicon Low Frequency High Power Transistor
Features
: 1. Using triple-diffusion,low resistance liner process.Heavy out-put Current,small saturation voltage drop.
Excellent out-put characteristic. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify,power adjustment,DC conversion. 4. Quality Class: JP, JT, JCT, GS, G, G+
TECHNICAL DATA:
Parameter name
Symbols Unit
Collector-Emitter Voltage VCEO V
Collector-Emitter Breakdown Voltage
V(BR)CEO V
Emitter-Base Voltage Max. Collector Current
VEBO ICM
Max. Collector Dissipation Junction Temperature Storage Temperature
PCM Tjm Tstg
W °C °C
Collector-Emitter...