• Part: 3DG122
  • Description: NPN Silicon High Frequency Middle Power Transistor
  • Manufacturer: Shaanxi Qunli Electric
  • Size: 50.65 KB
Download 3DG122 Datasheet PDF

Datasheet Summary

..net Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China NPN Silicon High Frequency Middle Power Transistor Features : 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Total Dissipation Max. Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage Symbols Unit Specifications A B C D (Ta = 25°C ) Test Condition...