3DG8 - NPN Silicon High Frequency Low Power Transistor

Key Features

1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

3DG8 npn silicon high frequency low power transistor by Shaanxi Qunli Electric - Datasheet Preview

Datasheet Details

Part number	3DG8
Manufacturer	Shaanxi Qunli Electric
File Size	31.17 KB
Description	NPN Silicon High Frequency Low Power Transistor
Datasheet	3DG8 Datasheet

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3DG8 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Ptot mW Max.