Datasheet Summary
NPN Silicon High Frequency Low Power Transistor
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage
V(BR)CBO V(BR)CEO V(BR)EBO
Collector- Emitter
VCE(sat)
Saturation...
