Shantou Huashan Electronic Devices H8050
NPN SILICON TRANSISTOR
| Part No. | H8050 |
|---|---|
| Datasheet | H8050 Download |
| Manufacturer |  Shantou Huashan Electronic Devices |
| Description | NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Juncttion Temperature…………………………………150℃ PC——Collector Dissipation…………………………………1W VCBO——Collector-Base Voltage………………………………40V VCEO——Collector-Emitter Voltage……………………………25V VEBO——Emitter-Base Voltage………………………………6V IC——Collector Current………………………………………1.5A TO-92 1―Emitter，E 2―Base，B 3―Collector，C █ELECTRICAL CHARACTERISTICS
（Ta=25℃） Symbol ICBO IEBO HFE Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain VBE VCE(sat） VBE(sat) BVCBO BVCEO BVEBO Cob fT Base- Emitter Voltage Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product █ hFE Classification Min Typ Max Unit Test Conditions 0.1 μA VCB=35V, IE=0 0.1 μA VEB=6V, IC=0 85 500 VCE=1V, IC=100mA 40 VCE=1V, IC=800mA 1 V VCE=1V, IC=10mA 0.5 V IC=800mA, IB=80mA 1.2 V IC=...