H9012
H9012 is PNP Silicon Transistor manufactured by Shantou Huashan.
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P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
- 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg
- - Storage Temperature ………………………… -55~150 ℃ T j
- - Junction Temperature ………………………………… 150 ℃ PC-
- Collector Dissipation…………………………………625m W VCBO-
- Collector-Base Voltage………………………………-40V VCEO-
- Collector-Emitter Voltage……………………………-20V V EBO
- - Emitter-Base Voltage ……………………………… -5V I C
- - Collector Current…………………………………… -500m A
TO-92
1―Emitter,E 2―Base,B 3―Collector, C
- ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Collector Cut-off Current
. Min Typ
Max
Unit
Test Conditions
Data Shee
ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) VBE(ON) BVCBO BVCEO BVEBO
-100 -100 78 40 246 -600 -1.2 -600 -40 -20 -5 -730 n A n A
VCB=-25V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50m A VCE=-1V, IC=-500m A
Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage m V V m V V V V
IC=-500m A, IB=-50m A IC=-500m A, IB=-50m A VCE=-1V, IC=-10m A IC=-100μA, IE=0 IC=-1m A, IB=0 IE=-100μA,IC=0
- h FE Classification
E 78- 112 F 96- 135 G 112- 166 H 144- 202 I 176- 246
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Data Sheet 4 U .
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P N P S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H9012 et4U.
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Data Sheet 4 U...