• Part: H9012
  • Description: PNP Silicon Transistor
  • Category: Transistor
  • Manufacturer: Shantou Huashan
  • Size: 287.07 KB
Download H9012 Datasheet PDF
Shantou Huashan
H9012
H9012 is PNP Silicon Transistor manufactured by Shantou Huashan.
.. P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. - 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg - - Storage Temperature ………………………… -55~150 ℃ T j - - Junction Temperature ………………………………… 150 ℃ PC- - Collector Dissipation…………………………………625m W VCBO- - Collector-Base Voltage………………………………-40V VCEO- - Collector-Emitter Voltage……………………………-20V V EBO - - Emitter-Base Voltage ……………………………… -5V I C - - Collector Current…………………………………… -500m A TO-92 1―Emitter,E 2―Base,B 3―Collector, C - ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector Cut-off Current . Min Typ Max Unit Test Conditions Data Shee ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) VBE(ON) BVCBO BVCEO BVEBO -100 -100 78 40 246 -600 -1.2 -600 -40 -20 -5 -730 n A n A VCB=-25V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50m A VCE=-1V, IC=-500m A Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage m V V m V V V V IC=-500m A, IB=-50m A IC=-500m A, IB=-50m A VCE=-1V, IC=-10m A IC=-100μA, IE=0 IC=-1m A, IB=0 IE=-100μA,IC=0 - h FE Classification E 78- 112 F 96- 135 G 112- 166 H 144- 202 I 176- 246 . Data Sheet 4 U . .. P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 et4U. . . Data Sheet 4 U...