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LH28F400SU-LC - 4M (512K bb 8/ 256K bb 16) Flash Memory

General Description

SYMBOL TYPE NAME AND FUNCTION BYTE-SELECT ADDRESSES: Selects between high and low byte when device is in x8 mode.

This address is latched in x8 Data Writes.

Not used in x16 mode (i.e., the DQ15/A1 input buffer is turned off when BYTE is high).

Key Features

  • User-Configurable x8 or x16 Operation 4M (512K × 8, 256K × 16) Flash Memory 56-PIN TSOP TOP VIEW.
  • 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC).
  • No Requirement for DC/DC Converter to Write/Erase NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC NC VPP RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 NC A16 BYTE GND.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LH28F400SU-LC FEATURES • User-Configurable x8 or x16 Operation 4M (512K × 8, 256K × 16) Flash Memory 56-PIN TSOP TOP VIEW • 5 V Write/Erase Operation (5 V VPP, 3.3 V VCC) – No Requirement for DC/DC Converter to Write/Erase NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC NC VPP RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 NC A16 BYTE GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 QE GND CE A0 NC NC • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Minimum 2.7 V Read Capability – 190 ns Maximum Access Time (VCC = 2.