LH51BV1000J Overview
The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology. The maximum applicable voltage on any pin with respect to GND.
LH51BV1000J Key Features
- Access time: 70 ns (MAX.)
- Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.)
- Data Retention: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C)
- Single power supply: 2.7 V to 3.6 V
- Operating temperature: -25°C to +85°C
- Fully-static operation
- Three-state output
- Not designed or rated as radiation hardened
- Package: 32-pin 6 × 10 mm CSP
- N-type bulk silicon DESCRIPTION