LH51BV1000J Key Features
- Access time: 70 ns (MAX.)
- Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.)
- Data Retention: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C)
- Single power supply: 2.7 V to 3.6 V
- Operating temperature: -25°C to +85°C
- Fully-static operation
- Three-state output
- Not designed or rated as radiation hardened
- Package: 32-pin 6 × 10 mm CSP
- N-type bulk silicon DESCRIPTION