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LH51BV1000J - CMOS 1M (128K x 8) Static Ram

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Sharp Electrionic Components

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LH51BV1000J CMOS 1M (128K x 8) Static Ram by Sharp Electrionic Components - Datasheet Preview — Datasheet preview – LH51BV1000J

Datasheet Details

Part number	LH51BV1000J
Manufacturer	Sharp Electrionic Components
File Size	77.98 KB
Description	CMOS 1M (128K x 8) Static Ram
Datasheet	LH51BV1000J Datasheet
Additional preview pages of the LH51BV1000J datasheet.

Product details

Description

The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode.

Features

Access time: 70 ns (MAX. ).
Current consumption: Operating: 30 mA (MAX. ) 5 mA (MAX. ) (tRC, tWC = 1 µs) Standby: 60 µA (MAX. ).
Data Retention: 1.0 µA (MAX. ) (VCCDR = 3 V, TA = 25°C).
Single power supply: 2.7 V to 3.6 V.
Operating temperature: -25°C to +85°C.
Fully-static operation.
Three-state output.
Not designed or rated as radiation hardened.
Package: 32-pin 6 × 10 mm CSP.
N-type bulk silicon.

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Published: Mar 22, 2005 |