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LH51BV1000J - CMOS 1M (128K x 8) Static Ram

Datasheet Summary

Description

The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode.

It is fabricated using silicon-gate CMOS process technology.

Features

  • Access time: 70 ns (MAX. ).
  • Current consumption: Operating: 30 mA (MAX. ) 5 mA (MAX. ) (tRC, tWC = 1 µs) Standby: 60 µA (MAX. ).
  • Data Retention: 1.0 µA (MAX. ) (VCCDR = 3 V, TA = 25°C).
  • Single power supply: 2.7 V to 3.6 V.
  • Operating temperature: -25°C to +85°C.
  • Fully-static operation.
  • Three-state output.
  • Not designed or rated as radiation hardened.
  • Package: 32-pin 6 × 10 mm CSP.
  • N-type bulk silicon.

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Datasheet Details

Part number LH51BV1000J
Manufacturer Sharp Electrionic Components
File Size 77.98 KB
Description CMOS 1M (128K x 8) Static Ram
Datasheet download datasheet LH51BV1000J Datasheet
Additional preview pages of the LH51BV1000J datasheet.

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Full PDF Text Transcription

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LH51BV1000J FEATURES • Access time: 70 ns (MAX.) • Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.) • Data Retention: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C) • Single power supply: 2.7 V to 3.6 V • Operating temperature: -25°C to +85°C • Fully-static operation • Three-state output • Not designed or rated as radiation hardened • Package: 32-pin 6 × 10 mm CSP • N-type bulk silicon DESCRIPTION The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology.
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