LH532000B Datasheet PDF - Sharp Electrionic Components CMOS 2M (256K x 8/128K x 16) MROM Specs

LH532000B - CMOS 2M (256K x 8/128K x 16) MROM

Datasheet Summary

Description

The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes.

It is fabricated using silicon-gate CMOS process technology.

Features

262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode).
BYTE input pin selects bit configuration.
Access times: 120/150 ns (MAX. ).
Low-power consumption: Operating: 275 mW (MAX. ) Standby: 550 µW (MAX. ).
Programmable OE/OE and OE1/OE1/DC.
Static operation.
TTL compatible I/O.
Three-state outputs.
Single +5 V power supply.
Packages: 40-pin, 600-mil DIP 40-pin, 525-mil.

Datasheet Details

Part number	LH532000B
Manufacturer	Sharp Electrionic Components
File Size	68.60 KB
Description	CMOS 2M (256K x 8/128K x 16) MROM
Datasheet	LH532000B Datasheet
Additional preview pages of the LH532000B datasheet.

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Full PDF Text Transcription

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LH532000B FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.) • Programmable OE/OE and OE1/OE1/DC • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 48-pin, 12 × 18 mm2 TSOP (Type I) • ×16 word-wide pinout DESCRIPTION The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology.

Published: Mar 22, 2005 |