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LH532100B

Manufacturer: Sharp Corporation

LH532100B datasheet by Sharp Corporation.

LH532100B datasheet preview

LH532100B Datasheet Details

Part number LH532100B
Datasheet LH532100B_SharpElectrionicComponents.pdf
File Size 79.17 KB
Manufacturer Sharp Corporation
Description CMOS 2M (256K x 8) MROM
LH532100B page 2 LH532100B page 3

LH532100B Overview

The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. Reverse bend available on request.

LH532100B Key Features

  • 262,144 words × 8 bit organization
  • Access time: 150 ns (MAX.)
  • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)
  • Static operation
  • Mask-programmable OE/OE and OE1/OE1/DC
  • TTL patible I/O
  • Three-state outputs
  • Single +5 V power supply
  • JEDEC standard EPROM pinout (DIP)
  • A17 D0
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