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LH532600 - CMOS 2M (256K x 8/128K x 16) MROM

Description

The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits (Byte mode) or 131,072 × 16 bits (Word mode) that can be selected by BYTE input pin.

It is fabricated using silicon-gate CMOS process technology.

Features

  • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode).
  • Access time: 100 ns (MAX. ).
  • Static operation.
  • TTL compatible I/O.
  • Three-state outputs.
  • Single +5 V power supply.
  • Power consumption: Operating: 412.5 mW (MAX. ) Standby: 550 µW (MAX. ).
  • Mask-programmable control pin: Pin 1 = OE1/OE1/DC.
  • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 48-pin, 10 × 20 mm2 TSOP (Type I) DESC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LH532600 FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) • Mask-programmable control pin: Pin 1 = OE1/OE1/DC • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 48-pin, 10 × 20 mm2 TSOP (Type I) DESCRIPTION The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits (Byte mode) or 131,072 × 16 bits (Word mode) that can be selected by BYTE input pin. It is fabricated using silicon-gate CMOS process technology.
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