LH5P8129 Overview
The LH5P8129 is a 1M bit Pseudo-Static RAM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. A PSRAM uses on-chip refresh circuitry with a DRAM memory cell for pseudo static operation which eliminates external clock inputs, while considering the pinout patibility with industry standard SRAMs.
LH5P8129 Key Features
- 131,072 × 8 bit organization
- Access times (MAX.): 60/80/100 ns
- Cycle times (MIN.): 100/130/160 ns
- Single +5 V power supply
- Pin patible with 1M standard SRAM
- Power consumption: Operating: 572/385/275 mW (MAX.) Standby (TTL level): 5.5 mW (MAX.) Standby (CMOS level): 1.1 mW (MAX
- TTL patible I/O
- Available for auto-refresh and self-refresh modes
- 512 refresh cycles/8 ms
- A16 R/W OE CE